This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
|Number of Elements||1|
|Gate-Source Voltage (Max)||±30V|
|Continuous Drain Current||9A|
|Operating Temp Range||-55C to 150C|
|Operating Temperature Classification||Military|
|Pin Count||3 +Tab|
|Packaging||Tape and Reel|
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