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K2611 Mosfet Transistor

Rs. 300
In stock


This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Type Power MOSFET
Number of Elements 1
Polarity N
Channel Mode Enhancement
Drain-Source On-Res 1.4Ohm
Drain-Source On-Volt 900V
Gate-Source Voltage (Max) ±30V
Continuous Drain Current 9A
Power Dissipation 150W
Operating Temp Range -55C to 150C
Operating Temperature Classification Military
Mounting Through Hole
Pin Count 3 +Tab
Package Type TO-3PN
Packaging Tape and Reel

Package Include:


Datasheet PDF Download : 
K2611 pdf 


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