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MGW20N60D IGBT Power Transistor

China
Rs. 450
B159, TMD5,Th3,KRT
In stock
+

This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and use s an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics of IGBT MOSFET result in inefficient operations at high frequencies.Co–packaged IGBT’s save space, reduce assembly time and cost.

Features And Specifications Of MGW20N60D IGBT MOSFET Power Transistor:

  • Type Designator: MGW20N60D
  • Type of IGBT Channel: N-Channel
  • Maximum Power Dissipation (Pc), W: 142W
  • Maximum Collector-Emitter Voltage |Vce|, V: 600V
  • Collector-Emitter saturation Voltage |Vcesat|, V: 2.3V
  • Maximum Gate-Emitter Voltage |Veg|, V: 20V
  • Maximum Collector Current |Ic|, A: 20A
  • Maximum Junction Temperature (Tj), °C: 150
  • Rise Time, nS: 59
  • Maximum Collector Capacity (Cc), pF: 2280pF
  • High Short Circuit Capability
  • Soft Recovery Free Wheeling Diode is included in the package

MGW20N60D DataSheet

Package Include:

  • 1 x MGW20N60D IGBT IC

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